Pecularities of  relaxation internal friction in 60Co gamma photons irradiated monocrystalline SiGe:P alloys

Ia Kurashvili; Giorgi Darsavelidze; Giorgi Chubinidze; David Mkheidze; Marina Kadaria; Nargiza Gogolashvili; Tatiana Melashvili

doi:10.52340/gs.2024.06.01.23

Authors

Ia Kurashvili Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia
Giorgi Darsavelidze Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia
Giorgi Chubinidze Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia
David Mkheidze Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia
Marina Kadaria Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia
Nargiza Gogolashvili Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia
Tatiana Melashvili Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia

DOI:

https://doi.org/10.52340/gs.2024.06.01.23

Keywords:

SiGe alloys, gamma radiation, relaxation, dislocation structure, activation energy, shear modulus

Abstract

Relaxation process caused by the interaction of radiation defects and dislocations is revelaed in the internal friction temperature spectrum, in the torsion oscillations frequency range of 1 Hz in the monocrystalline Si+2at.%Ge:P (10¹⁵cm^-3) alloys irradiated with ⁶⁰Co gamma photons. A tendency to increase the dynamic shear modulus and activation energy of the deformation origin internal friction relaxation maxima has been experimentally established. The possibilities of controlling the mobility of the dislocations surrounded by thermal and radiation defects are shown based on the increase in the absolute value of the shear modulus and the zigzag changes of temperature. The contribution of radiation defects to the radiation hardening of the test sample is analyzed. The obtained results can be applied in the process of development and creation of materials and devices with specific physical-mechanical characteristics based on SiGe alloys.

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