INFLUENCE OF ELECTRON IRRADIATION ON STRUCTURAL PHASE TRANSFORMATIONS DURING MICROINDENTATION OF n-Si

INFLUENCE OF ELECTRON IRRADIATION ON STRUCTURAL PHASE TRANSFORMATIONS DURING MICROINDENTATION OF n-Si

Authors

  • Giorgi Darsavelidze
  • Avtandil Sichinava
  • Kakhaber Shamatava
  • Marina Kadaria
  • Roman Abramishvili

DOI:

https://doi.org/10.52340/gs.2023.05.02.06

Keywords:

monocrystalline silicon, Vickers indenter, electron irradiation, contact pressure, elastic modulus

Abstract

   Influence of electron irradiation on structural changes in the process of microindentation by the Vickers method in (111) oriented n-Si has been studied.  It is shown, that electron irradiation with 1.1013 cm-2 fluence causes weak increase of elastic modulus and average contact pressure  causing plastic deformation. In the area of unloading of the functional dependences of the indenter load-displacement, a plateau and a gradual change in the slope are simultaneously revealed.  The mentioned changes are characteristic of partial amorphization and structural transformations in the metastable phases of silicon. Electron irradiation reveales a tendency to increase the critical pressures of phase transformations in the range of 4-5.5 GPa of average contact pressure.

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Author Biographies

Giorgi Darsavelidze

Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia

Avtandil Sichinava

 Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia

Kakhaber Shamatava

 Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia

Marina Kadaria

Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia

Roman Abramishvili

 Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi, Georgia

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Published

2023-04-12

How to Cite

Darsavelidze, G., Sichinava, A., Shamatava, K., Kadaria, M., & Abramishvili, R. (2023). INFLUENCE OF ELECTRON IRRADIATION ON STRUCTURAL PHASE TRANSFORMATIONS DURING MICROINDENTATION OF n-Si. GEORGIAN SCIENTISTS, 5(2), 41–48. https://doi.org/10.52340/gs.2023.05.02.06

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