Influence of alpha particle irradiation on electrophysical and dynamic mechanical properties of p-SiGe substrates with (111) orientation has been studied. Experimental results show, that changes in electrical resistance and concentration of current-carriers holes are more revelaed in p-Si+2%Ge:B substrates with high Ge content. In the alpha-irradiated test samples increase of the values of torsional oscillations strain amplitude and elastic limit by 1.5-1.8 times and 15 % increase of absolute value of shear modulus are observed. It is supposed, that the radiation point defects induced by alpha particle irradiation in the p-SiGe crystalline lattice form additional braking centers for dislocation motion and cause the radiation origin dynamic mechanical strengthening. The strengthening effect is more revealed in p-Si+2%Ge:B alloy.
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