INFLUENCE OF ALPHA PARTICLE IRRADIATION ON DYNAMIC MECHANICAL PROPERTIES OF p-SiGe SUBSTRATES
Influence of alpha particle irradiation on electrophysical and dynamic mechanical properties of p-SiGe substrates with (111) orientation has been studied. Experimental results show, that changes in electrical resistance and concentration of current-carriers holes are more revelaed in p-Si+2%Ge:B substrates with high Ge content. In the alpha-irradiated test samples increase of the values of torsional oscillations strain amplitude and elastic limit by 1.5-1.8 times and 15 % increase of absolute value of shear modulus are observed. It is supposed, that the radiation point defects induced by alpha particle irradiation in the p-SiGe crystalline lattice form additional braking centers for dislocation motion and cause the radiation origin dynamic mechanical strengthening. The strengthening effect is more revealed in p-Si+2%Ge:B alloy.
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D.Y.Oliver, D.B.Lawn, R.F. Cook, M.G. Reitsma, I.E. Bradby, I.S. Williams, P.Munroe. J.Mater. Res. Vol. 23, #2 (2008), 297-301
I.Yonenaga, J.Materials, Science: Materials in Electronics, 10 (1999), 329-333.
D.Yang, X.Yu, X.Ma, Y.Xu, L. Li and D.Que. J. Cryst. Growth, 243 (2002) 371-376
J.Chen, D.Yang. X.Ma, Z.Zeng, D.Tian. L.Li, D. Que, L.Gong. J.Appl. Phys., 103, (2008), 123521-1-123521-6
C.A.Londos, A. Andrianakis, E.N. Sgorou, V.Emtsev, and H.Ohyama. J. Applied Phys, 107 (2010)093520-1- 093520-7.
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