Electrophysical Properties of Monocrystalline n-Si+0.4at%Ge:P Alloy irradiated by 60Co Gamma Photons

In the monocrystal n-Si+0.4at.%Ge:P alloy irradiated with ⁶⁰Co gamma photons non-monotonic changes in electrical resistance, current carrier concentration and mobility were detected by isochronal annealing at a temperature range of 20-400°C. The contribution of current transformations in the structure of radiation defects (PV, VO, VO₂, C_iC_s, C_iO_i) to the temperature changes of electrical characteristics is analyzed. n-p conversion was detected at the critical temperature (~100°C) of isochronal annealing. Dissociation of PV centers and formation of electrically active VO centers were detected in the 120-150°C range. As a result, the concentration of current carriers increases. At elevated temperatures (> 150°C) non-monotonic changes in electrical characteristics are observed.The paper analyzes the contribution of Ge to the anomalous temperature changes of the electrophysical characteristics of the n-SiGe alloy.