Peculiarities of the radiation defects generation and their isochronal annealing in monocrystalline n-Si+4at%Ge:P alloy

Ia  Kurashvili; Tornike  Kimeridze; Kakhaber  Shamatava; Avtandil  Sichinava; George  Darsavelidze

doi:10.52340/gs.2022.04.04.36

Peculiarities of the radiation defects generation and their isochronal annealing in monocrystalline n-Si+4at%Ge:P alloy

Authors

Ia Kurashvili Ilia Vekua Sukhumi Institute of Physics and Technology
Tornike Kimeridze Ilia Vekua Sukhumi Institute of Physics and Technology
Kakhaber Shamatava Ilia Vekua Sukhumi Institute of Physics and Technology
Avtandil Sichinava Ilia Vekua Sukhumi Institute of Physics and Technology
George Darsavelidze Ilia Vekua Sukhumi Institute of Physics and Technology

DOI:

https://doi.org/10.52340/gs.2022.04.04.36

Keywords:

SiGe alloy, radiation defect, gamma-photons, isochronal annealing

Abstract

The effect of ⁶⁰Co gamma–photon irradiation on the radiation defects generation and their isochronal annealing in monocrystalline n-Si+4at%Ge:P alloy has been studied. Experimental bulk crystals were grown by Czochralski method in Ar atmosphere. Electrophysical characteristics were determined by the Hall effect measuring in a constant magnetic field at different stages of 20-minute isochronal annealing in 20-400°C temperature interval. It is established, that under the influence of compressive stresses localized near Ge atoms in the crystalline lattice of the experimental SiGe alloy decrease of the annealing temperature of radiation A-centers (VO) takes place. A change in dissociation temperature of radiation E-centers (PV) is revealed, stipulated by their directed migration in the stress field localized near dislocation.

Downloads

Download data is not yet available.

Author Biography

Tornike Kimeridze, Ilia Vekua Sukhumi Institute of Physics and Technology

David Aghmashenebeli National Defence Academy of Georgia

References

Londos C. A., Sgourou E. N., Hall D., Chroneos A., Vacancy-oxygen defects in silicon: the impact of isovalent doping, J. Mater Sci: Mater Electron, 2014, № 25, p.2395–2410.

Londos C.A., Andrianakis A., Emtsev V., Ohyama H., Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium, Semicond. Sci. Technol., 2009, vol. 24, № 075002, p.1-7.

Chroneos A., Sgourou E. N., Londos C. A., Schwingenschlögl U., Oxygen defect processes in silicon and silicon germanium, Applied Physics Reviews, 2015, № 2, p.021306-1 – 021306-16.

Downloads

Published

2022-09-16

How to Cite

Kurashvili , I. ., Kimeridze, . T. ., Shamatava, K. ., Sichinava, A. ., & Darsavelidze, G. . (2022). Peculiarities of the radiation defects generation and their isochronal annealing in monocrystalline n-Si+4at%Ge:P alloy. Georgian Scientists, 4(4), 323–328. https://doi.org/10.52340/gs.2022.04.04.36