Dependence of the Thermoelectric Characteristics of the Silicon-Germanium Alloy on the Generalized Parameter of the Material and Electronic Quality Factor
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The generalized parameter B* of silicon-germanium alloy is discussed. The influence of the phase composition of the material (SixGe1-x, x=0.7, 0.72, 0.76, 0.8 and 0.83) on the mentioned parameter under conditions close to room temperature has been studied. The relationship between the electronic quality factor and the generalized parameter is also constructed. A formula has been obtained (B* (0.088x+0.238)·104BE) that directly relates the generalized material parameter to the electronic correspondence coefficient for a given composition of SixGe1-x .
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X.Zhang, Z.Bu et al. Electronic quality factor for thermoelectrics. Science Advances, 2020, 6, eabc0726.
W.Liu, J.Zhou et al. New insight into the material parameter B to understand the enhanced thermoelectric performance of Mg2Sn1−x−yGexSby. Energy Environm. Sci., 2016, 9, 530-539.
A.M.Al-sheikh, M.M.Hussien, S.J.Abdullah. Pressure and temperature dependence of energy gap in SiC and Si1-xGex. Raf. Sci., 2019, 28, 53-61.
G.Bokuchava, K.Barbakhadze, I.Nakhutsrishvili. Thermoelectric parameters of alloy p-Si0.7Ge0.3. Bull. Georg. Acad. Sci., 2023, 17, 33-37.
G.Bokuchava, K.Barbakadze, I.Nakhutsrishvili. On the thermoelectric alloy n-SixGe1-x. Material Sci. & Engin., 2023, 7, 54-57.
G.J.Snyder, A.Pereyra, R.Gurunathan. Effective mass from Seebeck coefficient. Adv. Funct. Materials. 2022, 32, 2112772.
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