Keywords
generalized parameter of thermoelectric material
electronic quality factor
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Abstract
The generalized parameter B* of silicon-germanium alloy is discussed. The influence of the phase composition of the material (SixGe1-x, x=0.7, 0.72, 0.76, 0.8 and 0.83) on the mentioned parameter under conditions close to room temperature has been studied. The relationship between the electronic quality factor and the generalized parameter is also constructed. A formula has been obtained (B* (0.088x+0.238)·104BE) that directly relates the generalized material parameter to the electronic correspondence coefficient for a given composition of SixGe1-x .
References
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