Electrophysical Properties of Monocrystalline n-Si+0.4at%Ge:P Alloy irradiated by  60Co Gamma Photons

Ia  Kurashvili; Tornike  Kimeridze; Giorgi  Chubinidze; Nargiza  Gogolashvili; Giorgi  Darsavelidze

doi:10.52340/gs.2022.04.04.09

Authors

Ia Kurashvili LEPL Ilia Vekua Sukhumi Institute of Physics and Technology https://orcid.org/0000-0003-4175-1946
Tornike Kimeridze LEPL Ilia Vekua Sukhumi Institute of Physics and Technology
Giorgi Chubinidze LEPL Ilia Vekua Sukhumi Institute of Physics and Technology https://orcid.org/0000-0003-4639-9371
Nargiza Gogolashvili Ilia Vekua Sukhumi Institute of Physics and Technology
Giorgi Darsavelidze Ilia Vekua Sukhumi Institute of Physics and Technology

DOI:

https://doi.org/10.52340/gs.2022.04.04.09

Keywords:

Monocrystalline SiGe, γ-radiation, n-p conversion, radiation defect, isochronal annealing

Abstract

In the monocrystal n-Si+0.4at.%Ge:P alloy irradiated with ⁶⁰Co gamma photons non-monotonic changes in electrical resistance, current carrier concentration and mobility were detected by isochronal annealing at a temperature range of 20-400°C. The contribution of current transformations in the structure of radiation defects (PV, VO, VO₂, C_iC_s, C_iO_i) to the temperature changes of electrical characteristics is analyzed. n-p conversion was detected at the critical temperature (~100°C) of isochronal annealing. Dissociation of PV centers and formation of electrically active VO centers were detected in the 120-150°C range. As a result, the concentration of current carriers increases. At elevated temperatures (> 150°C) non-monotonic changes in electrical characteristics are observed.The paper analyzes the contribution of Ge to the anomalous temperature changes of the electrophysical characteristics of the n-SiGe alloy.

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