Keywords
γ-radiation
n-p conversion
radiation defect
isochronal annealing
How to Cite
Abstract
In the monocrystal n-Si+0.4at.%Ge:P alloy irradiated with 60Co gamma photons non-monotonic changes in electrical resistance, current carrier concentration and mobility were detected by isochronal annealing at a temperature range of 20-400°C. The contribution of current transformations in the structure of radiation defects (PV, VO, VO2, CiCs, CiOi) to the temperature changes of electrical characteristics is analyzed. n-p conversion was detected at the critical temperature (~100°C) of isochronal annealing. Dissociation of PV centers and formation of electrically active VO centers were detected in the 120-150°C range. As a result, the concentration of current carriers increases. At elevated temperatures (> 150°C) non-monotonic changes in electrical characteristics are observed.The paper analyzes the contribution of Ge to the anomalous temperature changes of the electrophysical characteristics of the n-SiGe alloy.
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