Peculiarities of the radiation defects generation and their isochronal annealing in monocrystalline n-Si+4at%Ge:P alloy
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The effect of 60Co gamma–photon irradiation on the radiation defects generation and their isochronal annealing in monocrystalline n-Si+4at%Ge:P alloy has been studied. Experimental bulk crystals were grown by Czochralski method in Ar atmosphere. Electrophysical characteristics were determined by the Hall effect measuring in a constant magnetic field at different stages of 20-minute isochronal annealing in 20-400°C temperature interval. It is established, that under the influence of compressive stresses localized near Ge atoms in the crystalline lattice of the experimental SiGe alloy decrease of the annealing temperature of radiation A-centers (VO) takes place. A change in dissociation temperature of radiation E-centers (PV) is revealed, stipulated by their directed migration in the stress field localized near dislocation.
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