Keywords
gamma radiation
relaxation
dislocation structure
activation energy
shear modulus
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How to Cite
Abstract
Relaxation process caused by the interaction of radiation defects and dislocations is revelaed in the internal friction temperature spectrum, in the torsion oscillations frequency range of 1 Hz in the monocrystalline Si+2at.%Ge:P (1015cm-3) alloys irradiated with 60Co gamma photons. A tendency to increase the dynamic shear modulus and activation energy of the deformation origin internal friction relaxation maxima has been experimentally established. The possibilities of controlling the mobility of the dislocations surrounded by thermal and radiation defects are shown based on the increase in the absolute value of the shear modulus and the zigzag changes of temperature. The contribution of radiation defects to the radiation hardening of the test sample is analyzed. The obtained results can be applied in the process of development and creation of materials and devices with specific physical-mechanical characteristics based on SiGe alloys.
References
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