Ключевые слова
gamma radiation
relaxation
dislocation structure
activation energy
shear modulus
Категории
Как цитировать
Аннотация
Relaxation process caused by the interaction of radiation defects and dislocations is revelaed in the internal friction temperature spectrum, in the torsion oscillations frequency range of 1 Hz in the monocrystalline Si+2at.%Ge:P (1015cm-3) alloys irradiated with 60Co gamma photons. A tendency to increase the dynamic shear modulus and activation energy of the deformation origin internal friction relaxation maxima has been experimentally established. The possibilities of controlling the mobility of the dislocations surrounded by thermal and radiation defects are shown based on the increase in the absolute value of the shear modulus and the zigzag changes of temperature. The contribution of radiation defects to the radiation hardening of the test sample is analyzed. The obtained results can be applied in the process of development and creation of materials and devices with specific physical-mechanical characteristics based on SiGe alloys.
Библиографические ссылки
K.Kinoshita, Y.Arai, T. Maeda, O.Nakatsuka. Si1-xGex bulk single crsyatls for substrates of electronic devices. J. Materials Science in Semiconductor Processing. 70 (2017) pp.12-17. doi: 10.1016/j.mssp.2016.10.012
I.Yonenaga, M.Sakurai, M.H.F.Sluiter, Y.Kawazoe, S.Muto. Atomistics structure and strain relaxation in Czochralski-grown SixGe1-x bulk alloys. J. Materials Science:Materials in Electronics 16 (2005) pp. 429-432. doi: 10.1007/s10854-005-2309-1
K.Tanaka, M.Suezawa, I.Yonenaga. Photoluminescence Spectra of Deformed Si-Ge alloy. J.Appl. Phys. 80 , 12 (1996) pp. 6991-6997
J.Weber, M.I.Alonso. Defect Control in Semiconductors, edited by K.Sumino (Elsevier Science, New York, 1990) p.1453.
I.Kurashvili, G.Darsavelidze, G.Bokuchava, I.Tabatadze, G.Chubinidze. Influence of Germanium and Boron Doping on Structural and Physical-Mechanical Characteristics of Monocrystalline Silicon . J. International Scientific Publications: Materials, Methods and Technologies. 8, ISSN 1314-7269. (2014). Pp. 298-302.
ი.ყურაშვილი, ტ.მელაშვილი, ნ. გოგოლაშვილი, გ.ჩუბინიძე, მ. ქადარია, დ.მხეიძე, გ.დარსაველიძე. მექანიკური პოლირების გავლენა მონოკრისტალური p-SiGe ფუძეშრეების ფიზიკურ-მექანიკურ თვისებებზე. Georgian Scientists/ ქართველი მეცნიერები, 4 #1, (2022) გვ.65-72. https://doi.org/10.52340/gs.2022.04.01.07
M.S. Blanter, I.S.Golovin, H.Neuhauser, H.-R.Sinning. Internal friction in metallic materials. A handbook. Springer Series in Materials Science. vol. 990, 2007, XVII, 539 p.
ი.ყურაშვილი, კ.შამათავა, ე.სანაია, გ.ჩუბინიძე, გ.დარსაველიძე. ალფა ნაწილაკებით დასხივების გავლენა შენადნობების p-SiGe ფუძეშრეების დინამიურ მექანიკურ თვისებებზე. Georgian Scientists/ ქართველი მეცნიერები, 5, #2, (2023) გვ.63-70. https://doi.org/10.52340/gs.2023.05.02.08
I. Kurashvili, G. Darsavelidze, T. Kimeridze, I.Tabatadze, T. Melashvili, A. Sichinava, G. Archuadze. Internal friction temperature spectra in electron-irradiated SiGe alloys. Bulletin of the Georgian National Academy of Sciences, vol. 13, no. 3, (2019) pp.43-49.
Это произведение доступно по лицензии Creative Commons «Attribution-NonCommercial-NoDerivatives» («Атрибуция — Некоммерческое использование — Без производных произведений») 4.0 Всемирная.
Copyright (c) 2024 Georgian Scientists