PAGAVA, Teimuraz; BERIDZE, Manana; KHOVHOLAVA, Darejan; SHOGIRADZE, Marina; ESIAVA, Nona; TURIASHVILI, Lali; ZHGHENTI, Maia. Influence of Highly Conductive Disordered Regions on Kinetics of Radiation Defects Annealing in n-Si Crystals Irradiated with High-Energy Protons. Georgian Scientists, [S. l.], v. 8, n. 2, p. 90–103, 2026. DOI: 10.52340/gs.2026.08.02.08. Disponível em: https://journals.4science.ge/index.php/GS/article/view/4746. Acesso em: 14 apr. 2026.