Pagava, T., Beridze, M., Khovholava, D., Shogiradze, M., Esiava, N., Turiashvili, L., & Zhghenti, M. (2026). Influence of Highly Conductive Disordered Regions on Kinetics of Radiation Defects Annealing in n-Si Crystals Irradiated with High-Energy Protons. Georgian Scientists, 8(2), 90–103. https://doi.org/10.52340/gs.2026.08.02.08