Pagava, T. et al. 2026. Influence of Highly Conductive Disordered Regions on Kinetics of Radiation Defects Annealing in n-Si Crystals Irradiated with High-Energy Protons. Georgian Scientists. 8, 2 (Apr. 2026), 90–103. DOI:https://doi.org/10.52340/gs.2026.08.02.08.